tic116 series silicon controlled rectifiers product information 1 april 1971 - revised june 2000 copyright ? 2000, power innovations limited, u k information is current as of publication date. products conform to specifications in accordance with the terms of power innovations standard warranty. production processing does not necessarily include testing of all parameters . l 8 a continuous on-state curren t l 80 a surge-curren t l glass passivated wafe r l 400 v to 800 v off-state voltag e l max i g t of 20 m a k a g to-220 package (top view) pin 2 is in electrical contact with the mounting base. mdc1aca 1 2 3 absolute maximum ratings over operating case temperature (unless otherwise noted ) notes: 1. these values apply for continuous dc operation with resistive load. above 70c derate linearly to zero at 110c . 2. this value may be applied continuously under single phase 50 hz half-sine-wave operation with resistive load. above 70c derate linearly to zero at 110c . 3. this value applies for one 50 hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge and on-state current. surge may be repeated after the device has returned to original thermal equilibrium . 4. this value applies for a maximum averaging time of 20 ms . ratin g symbo l valu e uni t repetitive peak off-state voltag e tic116d tic116m tic116s tic116 n v dr m 400 600 700 80 0 v repetitive peak reverse voltag e tic116d tic116m tic116s tic116 n v rr m 400 600 700 80 0 v continuous on-state current at (or below) 70c case temperature (see note 1 ) i t(rms ) 8 a average on-state current (180 conduction angle) at (or below) 70c case temperature (see note 2 ) i t(av ) 5 a surge on-state current at (or below) 25c case temperature (see note 3 ) i t m 8 0 a peak positive gate current (pulse width 300 m s ) i g m 3 a peak gate power dissipation (pulse width 300 m s ) p g m 5 w average gate power dissipation (see note 4 ) p g(av ) 1 w operating case temperature rang e t c -40 to +11 0 c storage temperature rang e t st g -40 to +12 5 c lead temperature 1.6 mm from case for 10 second s t l 23 0 c
tic116 serie s silicon controlled rectifier s 2 april 1971 - revised june 200 0 product information note 5: this parameter must be measured using pulse techniques, t p = 300 s, duty cycle 2 %. voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body . electrical characteristics at 25c case temperature (unless otherwise noted ) paramete r test condition s mi n ty p ma x uni t i dr m repetitive peak off-state curren t v d = rated v dr m t c = 110 c 2 m a i rr m repetitive peak reverse curren t v r = rated v rr m i g = 0 t c = 110 c 2 m a i g t gate trigger curren t v a a = 12 v r l = 10 0 w t p(g ) 3 2 0 m s 8 2 0 m a v g t gate trigger voltag e v a a = 12 v t p(g ) 3 20 s r l = 10 0 w t c = - 40c 2. 5 v v a a = 12 v t p(g ) 3 20 s r l = 10 0 w 0. 8 1. 5 v a a = 12 v t p(g ) 3 20 s r l = 10 0 w t c = 110c 0. 2 i h holding curren t v a a = 12 v initiating i t = 100 m a t c = - 40c 10 0 m a v a a = 12 v initiating i t = 100 m a 4 0 v t on-state voltag e i t = 8 a (see note 5 ) 1. 7 v dv/d t critical rate of rise of off-state voltag e v d = rated v d i g = 0 t c = 110 c 40 0 v/ s thermal characteristic s paramete r mi n ty p ma x uni t r q j c junction to case thermal resistanc e 3 c/ w r q j a junction to free air thermal resistanc e 62. 5 c/ w
3 april 1971 - revised june 2000 tic116 series silicon controlled rectifiers product information thermal informatio n figure 1. figure 2. figure 3. figure 4. a v e r a g e o n - s t a t e c u r r e n t t c - c a s e t e m p e r a t u r e - c 3 0 4 0 5 0 6 0 7 0 8 0 9 0 1 0 0 1 1 0 i t ( a v ) - m a x i m u m a v e r a g e o n - s t a t e c u r r e n t - a 0 2 4 6 8 1 0 1 2 1 4 1 6 t i 0 3 a a d e r a t i n g c u r v e c o n t i n u o u s d c c o n d u c t i o n a n g l e f f 0 1 8 0 f f = 1 8 0 max anode power loss i t - continuous on-state current - a 01 1 10 100 p a - max continuous anode power dissipated- w 01 1 10 100 ti03ab on-state current vs t j = 110c surge on-state current consecutive 50 hz half-sine-wave cycles 1 10 100 i tm - peak half-sine-wave current - a 1 10 100 ti03ac cycles of current duration vs t c 70c no prior device conduction gate control guaranteed t r a n s i e n t t h e r m a l r e s i s t a n c e c o n s e c u t i v e 5 0 h z h a l f - s i n e - w a v e c y c l e s 1 1 0 1 0 0 r q q j c ( t ) - t r a n s i e n t t h e r m a l r e s i s t a n c e - c / w 0 1 1 1 0 t i 0 3 a d c y c l e s o f c u r r e n t d u r a t i o n v s
tic116 serie s silicon controlled rectifier s 4 april 1971 - revised june 200 0 product information typical characteristic s figure 5. figure 6. figure 7. figure 8. gate trigger current t c - case temperature - c -50 -25 0 25 50 75 100 125 i gt - gate trigger current - ma 1 10 tc03aa case temperature vs v aa =12 v r l = 100 w w t p(g) 3 3 20 s gate trigger voltage t c - case temperature - c -50 -25 0 25 50 75 100 125 v gt - gate trigger voltage - v 0 02 04 06 08 1 tc03ab case temperature vs v aa =12 v r l = 100 w w t p(g) 3 3 20 s holding current t c - case temperature - c -50 -25 0 25 50 75 100 125 i h - holding current - ma 1 10 100 tc03ad case temperature vs v aa = 12 v initiating i t = 100 ma p e a k o n - s t a t e v o l t a g e i t m - p e a k o n - s t a t e c u r r e n t - a 0 1 1 1 0 1 0 0 v t m - p e a k o n - s t a t e v o l t a g e - v 0 0 5 1 1 5 2 2 5 t c 0 3 a e v s p e a k o n - s t a t e c u r r e n t t c = 2 5 c t p = 3 0 0 s d u t y c y c l e 2 %
5 april 1971 - revised june 2000 tic116 series silicon controlled rectifiers product information to-220 3-pin plastic flange-mount packag e this single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. the compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. leads require no additional cleaning or processing when used in soldered assembly . mechanical dat a to-220 all linear dimensions in millimeters ? 1,23 1,32 4,20 4,70 1 2 3 0,97 0,66 10,0 10,4 2,54 2,95 6,0 6,6 14,55 15,32 12,7 14,1 5,6 6,1 1,07 1,47 2,34 2,74 4,68 5,28 3,71 3,96 0,41 0,64 2,40 2,90 note a: the centre pin is in electrical contact with the mounting tab. 18,0 typ.
tic116 serie s silicon controlled rectifier s 6 april 1971 - revised june 200 0 product information important notic e power innovations limited (pi) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current . pi warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with pi's standard warranty. testing and other quality control techniques are utilized to the extent pi deems necessary to support this warranty. specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements . pi accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of pi covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used . pi semiconductor products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems . copyright ? 2000, power innovations limite d
|
